MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 99

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 72:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Tangent Line for
Notes:
V
V
1. DQS, DQS# signals must be monotonic between V
V
V
Setup Slew Rate
Falling Signal
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
) MAX
) MAX
DQS#
REF
) MIN
) MIN
V
DQS
DD
(
V
DC
t
Q
SS
DS
1
1
)
=
V
region
REF
tangent line [V
to AC
ΔTF
REF
ΔTF
Tangent line
(
Nominal line
DC
t
DS
) - V
IL
99
(
AC
) MAX]
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Setup Slew Rate
Rising Signal
Nominal
line
512Mb: x4, x8, x16 DDR2 SDRAM
ΔTR
IL
=
(
DC
tangent line [V
) MAX and V
Tangent line
t
DS
Input Slew Rate Derating
t
DH
IH
ΔTR
(
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AC
V
region
) MIN - V
REF
IH
to AC
(
DC
REF
) MIN.
(
DC
)]