MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 104

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power and Ground Clamp Characteristics
Table 34:
Figure 79:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Input Clamp Characteristics
Input Clamp Characteristics
Power and ground clamps are provided on the following input-only balls: BA1–BA0, A0–
A13 (A12 x16), CS#, RAS#, CAS#, WE#, ODT, and CKE.
25.0
20.0
15.0
10.0
5.0
0.0
Voltage Across Clamp
0.0
0.1
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0.2
0.3
0.4
104
0.5
Minimum Power Clamp
0.6
Voltage Across Clamp (V)
Power and Ground Clamp Characteristics
0.7
Current (mA)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.8
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1
512Mb: x4, x8, x16 DDR2 SDRAM
0.9
1.0
1.1
1.2
Minimum Ground Clamp
1.3
©2004 Micron Technology, Inc. All rights reserved.
1.4
Current (mA)
1.5
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1
1.6
1.7
1.8