MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 31

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
10. A WRITE command may be applied after the completion of the READ burst.
5. The following states must not be interrupted by any executable command (DESELECT or
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle and bursts are not in progress.
8. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a
9. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto
NOP commands must be applied on each positive clock edge during these states):
Refreshing:
Accessing mode
register:
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when
valid state for precharging.
precharge enabled and READs or WRITEs with auto precharge disabled.
Starts with registration of a REFRESH command and ends when
met. Once
Starts with registration of the LM command and ends when
been met. Once
state.
t
RP is met. Once
t
RFC is met, the DDR2 SDRAM will be in the all banks idle state.
31
t
t
MRD is met, the DDR2 SDRAM will be in the all banks idle
RP is met, all banks will be in the idle state.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Command Truth Tables
©2004 Micron Technology, Inc. All rights reserved.
t
MRD has
t
RFC is