MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 131

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 89:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
SOLDER BALL DIAMETER
REFERS TO POST REFLOW
CONDITION. THE PRE-
REFLOW DIAMETER IS 0.42
SEATING PLANE
11.20
0.10 C
84X ∅0.45
84-Ball FBGA Package – 10mm x 12.5mm (x16)
BALL A9
5.60
0.80 ±0.05
C
Note:
All dimensions are in millimeters.
3.20
10.00 ±0.10
1.80 ±0.05
6.40
0.80
TYP
CTR
C L
5.00 ±0.05
C L
BALL A1
6.25 ±0.05
0.80 TYP
131
BALL A1 ID
0.155 ±0.013
12.50 ±0.10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.20 MAX
512Mb: x4, x8, x16 DDR2 SDRAM
SOLDER BALL MATERIAL:
NON SOLDER MASK DEFINED BALL PAD: Ø 0.33
SUBSTRATE MATERIAL: PLASTIC LAMINATE
MOLD COMPOUND: EPOXY NOVOLAC
62% Sn, 36% Pb, 2% Ag OR
96.5% Sn, 3% Ag, 0.5%Cu
Package Dimensions
©2004 Micron Technology, Inc. All rights reserved.
BALL A1 ID