MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 28

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Extended Mode Register 3
Figure 14:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Extended Mode Register 3 (EMR3) Definition
Notes:
The extended mode register 3 (EMR3) controls functions beyond those controlled by the
mode register. Currently all bits in EMR3 are reserved, as shown in Figure 14 on page 28.
The EMR3 is programmed via the LM command and will retain the stored information
until it is programmed again or the device loses power. Reprogramming the EMR will not
alter the contents of the memory array, provided it is performed correctly.
EMR3 must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time
tion. Violating either of these requirements could result in unspecified operation.
1. E13 (A13)–E0 (A0) are reserved for future use and must all be programmed to “0.” A13 is
M15
BA1
15
EMR3
0
0
1
1
not used in x16 configuration.
M14
14
BA0
0
1
0
1
0
13
A13
1
Extended mode register (EMR2)
Extended mode register (EMR3)
Extended mode register (EMR)
12
Mode Register Definition
0
A12 A11
1
Mode register (MR)
0
11
1
0
10
1
A10
0
1
9
A9
0
1
8
A8
0
7
1
A7 A6 A5 A4 A3
0
6
1
28
0
5
1
0
4
1
0
3
1
0
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
t
A2 A1 A0
MRD before initiating any subsequent opera-
0
1
1
0
0
1
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode
Register (Ex)
Address Bus
Extended Mode Register 3
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