MC-78F0712-KIT Renesas Electronics America, MC-78F0712-KIT Datasheet - Page 353
MC-78F0712-KIT
Manufacturer Part Number
MC-78F0712-KIT
Description
KIT REF SYSTEM 78K0 UPD78F0712
Manufacturer
Renesas Electronics America
Specifications of MC-78F0712-KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Flash Memory Programming Characteristics
(T
(1) Basic characteristics
Notes 1.
(2) Serial write operation characteristics
Serial Write Operation
V
Step erase time
Erase time
Write time
Number of rewrites per chip
Time from RESET to FLMD0
count start
Count execution time
FLMD0 counter high-/low-level
width
RESET
FLMD0
FLMD1
A
DD
= +10 to +85 C, 4.0 V
supply current
2.
V
0 V
V
0 V
V
0 V
DD
DD
DD
Note 1
Parameter
Parameter
The erase verify time (writeback time) is not included.
If a sector (2 KB) is erased after it was written in 512 operations, in word units, the number of rewrite
operations is 1. Writing to the same address more than once for one erase is prohibited.
Chip unit
Sector unit
V
DD
T
RFCF
I
T
T
T
T
C
T
T
T
Symbol
Symbol
DD
5.5 V, 4.0 V
erass
eraca
erasa
wrwa
RFCF
COUNT
CH
erwr
CHAPTER 25 ELECTRICAL SPECIFICATIONS
/T
CL
f
1 erase + 1 write after erase = 1 rewrite
X
= 20 MHz, V
User’s Manual U17890EJ2V0UD
AV
T
CL
REF
DD
Conditions
Conditions
V
= 5.0 V
DD
, V
T
SS
CH
= 0 V)
T
COUNT
Note 2
2
19
MIN.
MIN.
/f
10
X
+
TYP.
TYP.
0.01
0.01
10
50
MAX.
MAX.
2.55
2.55
500
100
100
42
10
Times
Unit
Unit
mA
ms
ms
ms
ms
s
s
s
351
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