EVAL-ADUC836QS AD [Analog Devices], EVAL-ADUC836QS Datasheet - Page 8

• Manufacturer Part Number: EVAL-ADUC836QS
• Description: MicroConverter, Dual 16-Bit ADCs with Embedded 62 kB Flash MCU
• Manufacturer: AD [Analog Devices]

ADuC836
NOTES
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Specifi cations subject to change without notice.
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Temperature range for ADuC836BS (MQFP package) is –40°C to +125°C. Temperature range for ADuC836BCP (CSP package) is –40°C to +85°C.
These numbers are not production tested but are guaranteed by design and/or characterization data on production release.
The primary ADC is factory calibrated at 25°C with AV
The auxiliary ADC is factory calibrated at 25°C with AV
System Zero-Scale Calibration can remove this error.
different from these, an Internal Full-Scale Calibration will restore this error to 10 V. A system zero-scale and full-scale calibration will remove this error altogether.
Gain Error Drift is a span drift. To calculate Full-Scale Error Drift, add the Offset Error Drift to the Gain Error Drift times the full-scale input.
will remove this error altogether.
DAC linearity and ac specifi cations are calculated using: reduced code range of 48 to 4095, 0 to V
Gain Error is a measurement of the span error of the DAC.
In general terms, the bipolar input voltage range to the primary ADC is given by Range
V
V
1.25 V is used as the reference voltage to the auxiliary ADC when internal V
In Bipolar mode, the auxiliary ADC can only be driven to a minimum of AGND – 30 mV as indicated by the auxiliary ADC absolute AIN voltage limits. The bipolar
range is still –V
The ADuC836BCP (CSP package) has been qualifi ed and tested with the base of the CSP package fl oating.
Pins confi gured in SPI mode, pins confi gured as digital inputs during this test.
Pins confi gured in I
Flash/EE Memory Reliability Characteristics apply to both the Flash/EE program memory and Flash/EE data memory.
Endurance is qualifi ed to 100 Kcycles as per JEDEC Std. 22 method A117 and measured at –40°C, +25°C, +85°C, and +125°C. Typical endurance at 25°C is 700 Kcycles.
Retention lifetime equivalent at junction temperature (T
derate with junction temperature as shown in Figure 16 in the Flash/EE Memory section.
Power Supply current consumption is measured in Normal, Idle, and Power-Down modes under the following conditions:
Normal mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, Core Executing internal software loop.
Idle mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, PCON.0 = 1, Core Execution suspended in idle mode.
Power-Down mode: Reset = 0.4 V, All P0 pins and P1.2–P1.7 pins = 0.4 V, all other digital I/O pins are open circuit, Core Clk changed via CD bits in PLLCON,
PCON.1 = 1, Core Execution suspended in Power-Down mode, OSC turned on or off via OSC_PD bit (PLLCON.7) in PLLCON SFR.
DV
REF
REF
DD
= REFIN(+) to REFIN(–) voltage and V
= 2.5 V and RN2, RN1, RN0 = 1, 1, 0 the Range
power supply current will increase typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
REF
to +V
2
C mode only.
REF
; however, the negative voltage is limited to –30 mV.
REF
= 1.25 V when internal ADC V
DD
ADC
= DV
DD
J
) = 55°C as per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6 eV will
= ±1.28 V. In Unipolar mode, the effective range is 0 V to 1.28 V in our example.
= DV
DD
= 5 V yielding this full-scale error of 10 V. If user power supply or temperature conditions are signifi cantly
DD
= 5 V yielding this full-scale error of –2.5 LSB. A system zero-scale and full-scale calibration
REF
is selected via XREF0 and XREF1 bits in ADC0CON and ADC1CON, respectively.
REF
–8–
is selected. RN = decimal equivalent of RN2, RN1, RN0, e.g.,
ADC
= ±(V
REF
REF
; reduced code range of 100 to 3950, 0 to V
2
RN
)/125, where:
DD
.
REV. 0