MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 7

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 3:
NOTE:
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
1. Expansion address: 2A for 144Mb
2. Expansion address: 3A for 36Mb
3. BW1# controls writes to D9:D17
4. Expansion address: 7A for 288Mb
5. Expansion address: 10A for 72Mb
6. BW0# controls writes to D0:D8
M
A
D
G
N
B
C
H
K
R
E
F
L
P
J
DLL#
TDO
CQ#
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
1
1 Meg x 18 Ball Layout (Top View)
165-Ball FBGA
V
SS/
V
D11
Q12
D13
Q15
D17
TCK
Q9
NC
NC
NC
NC
NC
NC
2
REF
SA
DD
, HSTL, DDR SIO SRAM
1
NC/SA
V
Q10
Q11
Q13
Q14
Q16
Q17
D10
D12
D14
D15
D16
D9
DD
SA
3
Q
2
V
V
V
V
V
V
V
R/W#
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
SA
SA
SA
4
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
BW1#
V
V
V
V
V
V
V
V
V
NC
SA
SA
SA
SA
5
DD
DD
DD
DD
DD
SS
SS
SS
SS
3
7
2 MEG
V
V
V
V
V
V
V
V
V
K#
SA
SA
C#
K
6
C
SS
SS
SS
SS
SS
SS
SS
SS
SS
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NC/SA
BW0#
V
V
V
V
V
V
V
V
V
X
SA
SA
SA
SA
7
DD
DD
DD
DD
DD
SS
SS
SS
SS
8, 1 MEG
DD
6
4
, HSTL, DDR SIO SRAM
V
V
V
V
V
V
V
LD#
V
V
V
V
SA
DD
DD
DD
DD
DD
DD
DD
SA
SA
8
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
X
V
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
SA
DD
SA
9
18, 512K
Q
V
SS/
V
TMS
©2003 Micron Technology, Inc.
NC
Q7
NC
D6
NC
NC
Q4
D3
NC
Q1
NC
D0
10
REF
SA
5
X
36
TDI
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
11