MT28F002B3 Micron Semiconductor Products, Inc., MT28F002B3 Datasheet
MT28F002B3
Related parts for MT28F002B3
MT28F002B3 Summary of contents
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... These devices are fabricated T with Micron’s advanced CMOS floating-gate process. B The MT28F002B3 and MT28F200B3 are organized into five separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or None overwrite, the devices feature a hardware-protected ET boot block ...
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... ORDER NUMBER AND PART MARKING MT28F002B3VG-9 B MT28F002B3VG-9 T MT28F002B3VG-10 BET MT28F002B3VG-10 TET Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 44-Pin SOP RP ...
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... WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F002B3. 2Mb Smart 3 Boot Block Flash Memory F48.p65 – Rev. 1/00 SMART 3 BOOT BLOCK FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM 16KB Boot Block 8KB Parameter Block 18 (19) 9 8KB Parameter Block 9 96KB Main Block (10) Addr ...
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PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS – 47 11, 10 21, 20, 19, 25, 24, 23, 7, ...
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TRUTH TABLE (MT28F200B3) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY 2, 7 WRITE/ERASE ...
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... TRUTH TABLE (MT28F002B3) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP 4 WRITE 4, 6 WRITE 5 READ ARRAY 8, 9 DEVICE IDENTIFICATION ...
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... WP# pin is brought HIGH. This provides additional security for the core firmware during in-system firm- ware updates should an unintentional power fluctua- tion or system reset occur. The MT28F002B3 and MT28F200B3 are available with the boot block starting at the bottom of the address space (“B” suffix) or the top of the address space (“ ...
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... See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F002B3 and MT28F200B3 feature a very low cur- rent, deep power-down mode. To enter this mode, the RP# pin is taken to V 0.2V. In this mode, the current SS draw is a maximum ...
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... WRITE is completed. The V PP (3.3V or 5V) when the boot block is written to or erased. The MT28F002B3 and MT28F200B3 are available in two configurations and top or bottom boot block. The top boot block version supports processors of the x86 variety. The bottom boot block version is intended for 680X0 and RISC applications ...
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INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the ...
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... COMMAND SET To simplify writing of the memory blocks, the MT28F002B3 and MT28F200B3 incorporate an ISM that controls all internal algorithms for the WRITE and ERASE cycles. An 8-bit command set is used to control the device. Details on how to sequence commands are provided in the Command Execution section. Table 1 lists the valid commands ...
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COMMAND EXECUTION Commands are issued to bring the device into differ- ent operational modes. Each mode allows specific op- erations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section ...
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WRITE. To execute a null WRITE, FFH must be written when BYTE# is LOW, or FFFFH must be written when BYTE# is HIGH. Once the ISM status bit (SR7) has been set, the device will be in the ...
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... Operation outside these limits may reduce the number of write and erase cycles that can be performed on the device. POWER USAGE The MT28F002B3 and MT28F200B3 offer several power-saving features that may be utilized in the array read mode to conserve power. Deep power-down mode is enabled by bringing RP# LOW. Current draw (I this mode is a maximum ...
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SELF-TIMED WRITE SEQUENCE (WORD or BYTE WRITE) Start WRITE 40H or 10H WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20H WRITE D0H, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: 1. Sequence may be ...
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Smart 3 Boot Block Flash Memory F48.p65 – Rev. 1/00 SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0H (ERASE SUSPEND 3. STATUS REGISTER READ NO SR7 = ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ................................ -0.5V to +6V** SS Input Voltage Relative to V ................ -0.5V to +6V Voltage Relative to V ............... -0.5V to +12. RP ...
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CAPACITANCE ( MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0 C PARAMETER/CONDITION READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS (CE# 0.2V; OE 0.2V ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature ( CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or ...
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V IH A0-A16/(A17 DQ0-DQ15 RWH TIMING PARAMETERS Commercial Temperature (0 C Extended Temperature ...
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1)-A16/(A17 DQ0-DQ7 DQ8-DQ14 RP TIMING ...
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... For SmartVoltage-compatible production programming, 12V V be connected for up to 100 cumulative hours. 5. Applies to MT28F200B3 only. 6. Applies to MT28F002B3 and MT28F200B3 with BYTE = LOW. 7. Parameter is specified when device is not accessed. Actual current draw will be I executed while the device is in erase suspend mode. ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature ( CHARACTERISTICS PARAMETER WRITE cycle time WE# HIGH pulse width CE# HIGH pulse width Address setup time to WE# or CE# HIGH Data setup time to ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address hold time from WE# HIGH Data hold time from WE# HIGH CE# setup time to WE# LOW CE# hold time ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: CE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address hold time from CE# HIGH Data hold time from CE# HIGH WE# setup time to CE# LOW WE# hold time ...
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V IH A0-A16/(A17) Note CMD DQ0-DQ7 DQ0-DQ15 ...
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V IH A0-A16/(A17) Note CMD DQ0-DQ7 DQ0-DQ15 ...
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TYP PIN #1 INDEX NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 2Mb ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...