MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 14

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 10: I
Notes appear following parameter tables on page 17; 0°C £ T
Table 11: Capacitance
Note 13; notes appear following parameter tables on page 17
Table 12: Thermal Resistance
Note 13; notes appear following parameter tables on page 17
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Output Supply
Current: DDR
(Information only)
DESCRIPTION
DESCRIPTION
Address/Control Input Capacitance
Input, Output Capacitance (D, Q)
Clock Capacitance
Junction to Ambient (Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
Operating Conditions and Maximum Limits
All inputs £ VIL or
(MIN); Outputs open; x:1
All addresses/data static
and data bits toggling
t
KHKH =
WRITEs; 50% address
Device in NOP state;
Cycle time
on each clock cycle
ratio for READs to
DD
CONDITIONS
, HSTL, DDR SIO SRAM
C
L
t
= 15pF
KHKH (MIN);
³
t
KHKH
³
VIH;
Soldered on a 4.25 x 1.125 inch,
4-layer printed circuit board
T
x8, x18
x8, x18
A
SYM
I
x36
x36
DD
x18
x36
= 25°C; f = 1 MHz
I
I
CONDITIONS
SB1
x8
DD
CONDITIONS
Q
TYP
TBD
TBD
TBD
14
A
£ +70°C; V
2 MEG
525
710
255
265
189
42
95
-3
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-3.3
475
640
235
240
170
38
85
DD
X
= 1.8V ±0.1V unless otherwise noted
SYMBOL
SYMBOL
400
545
200
210
142
32
71
8, 1 MEG
DD
-4
C
C
q
q
q
MAX
C
CK
JA
O
JC
JB
I
, HSTL, DDR SIO SRAM
330
445
170
180
142
25
57
-5
280
380
150
160
21
47
95
-6
19.4
TYP
TYP
4.5
5.5
1.0
9.6
6
X
18, 512K
-7.5
235
310
125
135
17
38
76
UNITS
MAX
°C/W
°C/W
°C/W
5.5
6.5
UNITS
7
©2003 Micron Technology, Inc.
mA
mA
mA
X
NOTES
UNITS
NOTES
10, 11
9, 10
36
pF
pF
pF
15
14
12