MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 19

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
1. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e.,
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A3 = A4, then data Q40 = D30 and Q42 = D31. Write data is forwarded immediately as
A0 + 1.
read results.
R/W#
CQ#
LD#
CQ
K#
C#
Q
K
A
D
C
t KHCH
Qx2
NOP
1
t KHKL
t
IVKH
(Note 2)
t KLKH
t AVKH t KHAX
DD
, HSTL, DDR SIO SRAM
A0
READ
(burst of 2)
2
t KHCH
t KHKH
t KHIX
t CHCQX
t CHCQV
t CHQX1
A1
t CHQV
3
READ
(burst of 2)
t KHK#H
READ/WRITE Timing
(Note 1)
Q00
A2
4
WRITE
(burst of 2)
Figure 6:
t CHQX
t DVKH
Q01
t CHCQX
t CHCQV
t KHDX
t CHQV
19
Q10
2 MEG
D20
A3
5
WRITE
(burst of 2)
1.8V V
Q11
(Note 3)
D21
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DVKH
t CHQX
t KHDX
A4
D30
X
6
t CHQZ
READ
(burst of 2)
t KHKL
8, 1 MEG
DD
D31
, HSTL, DDR SIO SRAM
t KLKH
DON’T CARE
7
NOP
t CQHQV
t KHKH
X
18, 512K
Q40
UNDEFINED
8
t KHK#H
Q41
©2003 Micron Technology, Inc.
X
36