MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 12

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 6:
Notes 1-6
Table 7:
Notes 7, 8
NOTE:
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW. ­ means rising edge; ¯ means falling edge.
2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges, except if C
3. LD# and R/W# must meet setup and hold times around the rising edge (LOW to HIGH) of K and are registered at the
4. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by
7. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation
8. This table illustrates the operation for the x18 devices. The x36 device operation is similar, except for the addition of
OPERATION
OPERATION
WRITE Cycle:
Load address, input write data on
consecutive K and K# rising edges
READ Cycle:
Load address, output data on
consecutive C and C# rising edges
NOP: No operation
STANDBY: Clock stopped
WRITE D0:17 at K rising edge
WRITE D0:17 at K# rising edge
WRITE D0:8 at K rising edge
WRITE D0:8 at K# rising edge
WRITE D9:17 at K rising edge
WRITE D9:17 at K# rising edge
WRITE nothing at K rising edge
WRITE nothing at K# rising edge
and C# are HIGH, then data outputs are delivered at K and K# rising edges.
rising edge of K.
overcoming transmission line charging symmetrically.
provided that the setup and hold requirements are satisfied.
BW2# (controls D18:D26) and BW3# (controls D27:D35). The x8 device operation is similar, except that NW0# controls
D0:D3, and NW1# controls D4:D7.
Truth Table
BYTE WRITE Operation
DD
, HSTL, DDR SIO SRAM
Stopped
L®H
L®H
L®H
K
12
LD#
H
X
L
L
2 MEG
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R/W#
H
X
X
X
L
L®H
L®H
L®H
L®H
8, 1 MEG
DD
K
, HSTL, DDR SIO SRAM
Q = High-Z
Q = High-Z
Previous
D or Q
D
Q
C#(t)­
D = X
L®H
L®H
L®H
L®H
K(t)­
State
A
A
K#
at
at
(A0)
(A0)
X
18, 512K
BW0#
0
0
0
0
1
1
1
1
©2003 Micron Technology, Inc.
Q = High-Z
Q
Q = High-Z
D
K#(t + 1)­
C(t + 1)­
Previous
A
A
D or Q
D = X
(A0 + 1)
State
(A0 + 1)
at
at
X
BW1#
36
0
0
1
1
0
0
1
1