MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 4

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
1. The functional block diagram illustrates simplified device operation. See truth table, ball descriptions, and timing
2. For 2 Meg x 8, n = 21, a = 8; NWx# = 2 separate nibble writes.
D (Data In)
ADDRESS
diagrams for detailed information.
For 1 Meg x 18, n = 20, a = 18; BWx# = 2 separate byte writes.
For 512K x 36, n = 19, a = 36; BWx# = 4 separate byte writes.
BWx#
R/W#
LD#
K#
K#
K
K
R/W#
LD#
n
a
REGISTRY
REGISTRY
ADDRESS
& LOGIC
& LOGIC
DATA
DD
, HSTL, DDR SIO SRAM
2a
n
Figure 2: Functional Block Diagram
K
2 Meg x 8; 1 Meg x 18; 512K x 36
W
R
T
E
I
R
G
E
2
W
R
T
E
I
D
R
R
V
E
I
MEMORY
2
ARRAY
n
x a
4
2 MEG
1.8V V
N
S
E
S
E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
M
A
P
S
X
MUX
8, 1 MEG
DD
, HSTL, DDR SIO SRAM
2a
C
R
G
E
A
O
U
U
T
P
T
C,C#
K,K#
OR
X
2a
18, 512K
O
U
U
T
P
T
S
E
E
C
T
L
O
U
P
U
T
T
©2003 Micron Technology, Inc.
U
R
B
F
F
E
a
2
(Data Out)
X
Q
36
CQ
CQ#