MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 24

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC Test Conditions
Table 15: TAP DC Electrical Characteristics and Operating Conditions
Note 2; 0°C £ T
NOTE:
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
1. All voltages referenced to V
2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in JTAG operation will have
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . V
Input rise and fall times. . . . . . . . . . . . . . . . . . . . . . .1ns
Input timing reference levels . . . . . . . . . . . . . . . . . 0.9V
Output reference levels
Test load termination supply voltage . . . . . . . . . . 0.9V
the DC values as defined in Table 8, ”DC Electrical Characteristics and Operating Conditions,” on page 13.
A
£ +70°C; V
DD
DD
. . . . . . . . . . . . . . . . . . . . . . . . 0.9V
, HSTL, DDR SIO SRAM
= 1.8V ±0.1V unless otherwise noted
SS
(GND).
Output(s) disabled,
0V £ V
0V £ V
|I
CONDITIONS
I
|I
OHC
OLC
I
OHT
OLT
| = 100µA
= 100µA
| = 2mA
= 2mA
SS
IN
IN
to 1.8V
£ V
£ V
DD
DD
24
2 MEG
SYMBOL
V
V
V
V
V
IL
V
1.8V V
IL
OH1
OH2
OL1
OL2
IH
IL
O
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
X
TDO
8, 1 MEG
DD
MIN
-0.3
-5.0
-5.0
1.3
1.6
1.4
, HSTL, DDR SIO SRAM
Figure 10:
Z = 50Ω
O
V
DD
MAX
0.5
5.0
5.0
0.2
0.4
+ 0.3
X
18, 512K
0.9V
UNITS
µA
µA
V
V
V
V
V
V
©2003 Micron Technology, Inc.
20pF
50Ω
NOTES
X
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
36
2
2