MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 13

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Absolute Maximum Ratings
Voltage on V
Voltage on V
V
Storage Temperature ..............................-55ºC to +125ºC
Junction Temperature .......................................... +125ºC
Short Circuit Output Current .............................. ±70mA
Table 8:
Notes appear following parameter tables on page 17; 0°C £ T
Table 9:
Notes appear following parameter tables on page 17; 0°C £ T
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Signal Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Reference Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
IN
Relative to V
Relative to V
...................................................... -0.5V to V
DD
DD
DC Electrical Characteristics and Operating Conditions
AC Electrical Characteristics and Operating Conditions
SS
SS
Q Supply
Supply
....................................... -0.5V to +2.8V
....................................... -0.5V to +V
DD
, HSTL, DDR SIO SRAM
0V £ V
Output(s) disabled,
0V £ V
CONDITIONS
|I
I
OH
OL
IN
Note 1
Note 2
| £ 0.1mA
£ 0.1mA
IN
CONDITIONS
£ V
£ V
DD
DD
Q (Q)
DD
Q
+0.5V
DD
V
SYMBOL
V
OH
V
OL
V
13
V
A
A
IH
V
V
V
IL
V
V
IL
DD
IL
REF
£ +70°C; V
OH
(
DD
£ +70°C; V
(
(
OL
SYMBOL
(
IN
2 MEG
O
LOW
DC )
LOW
DC
I
V
Maximum Ratings may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
package type, cycle time, loading, ambient tempera-
ture, and airflow.
V
Q
IH
IL
)
(
Stresses greater than those listed under Absolute
Maximum Junction Temperature depends upon
)
(
1.8V V
)
AC
AC
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
DD
DD
DD
DD
V
V
X
V
DD
= 1.8V ±0.1V unless otherwise noted
REF
= 1.8V ±0.1V unless otherwise noted
Q/2 - 0.12 V
Q/2 - 0.12 V
REF
MIN
0.68
-0.3
-0.3
V
1.7
1.4
8, 1 MEG
DD
Q - 0.2
MIN
-5
-5
SS
+ 0.1
–
+ 0.2
, HSTL, DDR SIO SRAM
V
REF
V
V
DD
DD
MAX
V
DD
DD
–
REF
Q/2 + 0.12
Q/2 + 0.12
V
MAX
- 0.2
0.95
V
Q + 0.3
Q + 0.3
0.2
1.9
DD
X
5
5
DD
- 0.1
Q
18, 512K
UNITS
V
V
UNITS
©2003 Micron Technology, Inc.
µA
µA
V
V
V
V
V
V
V
V
V
V
NOTES
3, 4, 8
3, 4, 8
X
NOTES
3, 5, 6
3, 5, 6
3, 5, 6
3, 5, 6
3, 4
3, 4
3, 4
3, 7
36
3
3