MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 28

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Document Revision History
Rev. H, Pub 3/03 ..............................................................................................................................................................3/03
Rev. G, Pub 2/03...............................................................................................................................................................2/03
Rev. 6, Pub 9/02 ...............................................................................................................................................................9/02
Rev. 5, Pub. 9/02, ADVANCE ...........................................................................................................................................9/02
Rev. 4, Pub. 8/02, ADVANCE ...........................................................................................................................................8/02
Rev. 3, Pub. 12/01, ADVANCE .......................................................................................................................................12/01
Rev. 2, Pub. 11/01, ADVANCE .......................................................................................................................................11/01
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
• Updated JTAG Section
• Removed Preliminary Status
• Added definitive notes to Figure 3
• Added definitive note to Table 9
• Added definitive note concerning bit# 64 to Table 19
• Removed Errata specifications
• Updated AC timing values with new codevelopment values
• Updated JTAG description to reflect 1149.1 specification compliance with EXTEST feature
• Added definitive note concerning SRAM (DQ) I/O balls used for JTAG DC values and timing
• Changed process information in header to die revision indicator
• Updated Thermal Resistance Values to Table 12:
• Updated Thermal Resistance values to Table 12:
• Added T
• Modified Figure 2 regarding depth, configuration, and byte controls
• Added definitive notes regarding I/O behavior during JTAG operation
• Added definitive notes regarding I
• Removed note regarding AC derating information for full I/O range
• Remove references to JTAG scan chain logic levels being at logic zero for NC pins in Tables 5 and 19
• Revised ball description for NC balls:
• Reverted data sheet to PRELIMINARY designation
• Added new Output Times values
• Added Errata to back of data sheet
• emoved ADVANCE designation
• Removed T
• Updated format
• Changed AC timing
• New ADVANCE data sheet
C
C
C
J
J
J
These balls are internally connected to the die, but have no function and may be left not connected to the
board to minimize ball count.
A
C
B
I
O
CK
= 19.4 TYP
= 1.0 TYP
= 9.6 TYP
= 4.5 TYP; 5.5 MAX
= 6 TYP; 7 MAX
= 5.5 TYP; 6.5 MAX
J
£ +95°C to Table 13
J
references
DD
, HSTL, DDR SIO SRAM
DD
test conditions for read to write ratio
28
2 MEG
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
8, 1 MEG
DD
, HSTL, DDR SIO SRAM
X
18, 512K
©2003 Micron Technology, Inc.
X
36