DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 631

MCU 3/5V 128K PB-FREE 100-TQFP

DF3048BVX25V

Manufacturer Part Number
DF3048BVX25V
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048BVX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048BVX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
18.7.2
In program-verify mode, the data written in program mode is read to check whether it has been
correctly written in the flash memory.
After the elapse of the given programming time, clear the P bit in FLMCR1, then wait for at least
(t
watchdog timer setting is also cleared. The operating mode is then switched to program-verify
mode by setting the PV bit in FLMCR1. Before reading in program-verify mode, a dummy write
of H'FF data should be made to the addresses to be read. The dummy write should be executed
after the elapse of (t
in 16-bit units), the data at the latched address is read. Wait at least (t
before performing this read operation. Next, the originally written data is compared with the verify
data, and reprogram data is computed (see figure 18.13) and transferred to RAM. After
verification of 128 bytes of data has been completed, exit program-verify mode, wait for at least
(t
necessary, set program mode again, and repeat the program/program-verify sequence as before.
The maximum value for repetition of the program/program-verify sequence is indicated by the
maximum programming count (N). Leave a wait time of at least (t
Notes on Program/Program-Verify Procedure
1. The program/program-verify procedure for the H8/3048F-ONE is a 128-byte-unit
2. When performing continuous writing of 128-byte data to flash memory, byte-unit transfer
3. Verify data is read in word units.
4. The write pulse is applied and a flash memory write executed while the P bit in FLMCR1 is
cp
cpv
) µs before clearing the PSU bit to exit program mode. After exiting program mode, the
) µs, then determine whether 128-byte programming has finished. If reprogramming is
programming algorithm.
In order to perform 128-byte-unit programming, the lower 8 bits of the write start address must
be H'00 or H'80.
should be used.
128-byte data transfer is necessary even when writing fewer than 128 bytes of data. H'FF data
must be written to the extra addresses.
set. In the H8/3048F-ONE, write pulses should be applied as follows in the program/program-
verify procedure to prevent voltage stress on the device and loss of write data reliability.
a. After write pulse application, perform a verify-read in program-verify mode and apply a
write pulse again for any bits read as 1 (reprogramming processing). When all the 0-write
bits in the 128-byte write data are read as 0 in the verify-read operation, the
program/program-verify procedure is completed. In the H8/3048F-ONE, the number of
Program-Verify Mode
Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
spv
) µs or more. When the flash memory is read in this state (verify data is read
Rev. 3.00 Sep 27, 2006 page 603 of 872
cswe
) µs after clearing SWE.
spvr
) µs after the dummy write
REJ09B0325-0300

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