DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 628
DF3048BVX25V
Manufacturer Part Number
DF3048BVX25V
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3048BVX25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Manufacturer
Quantity
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Company:
Part Number:
DF3048BVX25V
Manufacturer:
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Quantity:
10 000
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Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
Notes: 1. Normally do not apply a high level to the FWE pin. Apply a high level to the FWE pin
18.7
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by
setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1 for addresses H'000000 to H'01FFFF.
The flash memory cannot be read while it is being written or erased. Install the program to control
flash memory programming and erasing (programming control program) in the on-chip RAM or in
external memory, and execute the program from there.
See section 18.11, Notes on Flash Memory Programming/Erasing, for points to be noted when
programming or erasing the flash memory. In the following operation descriptions, wait times
after setting or clearing individual bits in FLMCR1 are given as parameters; for details of the wait
times, see section 21.1.6, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if bits SWE, ESU, PSU, EV, PV, E, and P of FLMCR1 are
Rev. 3.00 Sep 27, 2006 page 600 of 872
REJ09B0325-0300
2. When the flash memory is read normally in the user program mode, the programming/
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming should be performed in the erased state. Do not perform additional
Programming/Erasing Flash Memory
only when programming/erasing flash memory (including flash memory emulation by
RAM).
Also, while a high level is input to the FWE pin, the watchdog timer should be
activated to prevent overprogramming or overerasing due to program runaway, etc.
erasing program must not be executed. Bits 6 to 0 in FLMCR1 must be cleared to 0.
set/reset by a program in flash memory in the corresponding address areas.
executed if FWE = 0).
programming on previously programmed addresses.
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