DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 208
DF3048BVX25V
Manufacturer Part Number
DF3048BVX25V
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3048BVX25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3048BVX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 7 Refresh Controller
Example 2: Connection to 2WE
Figure 7.9 shows typical interconnections to a single 2WE 4-Mbit DRAM, and the corresponding
address map. Figure 7.10 shows a setup procedure to be followed by a program for this example.
The DRAM in this example has 10-bit row addresses and 8-bit column addresses. Its address area
is H'600000 to H'67FFFF.
Rev. 3.00 Sep 27, 2006 page 180 of 872
REJ09B0325-0300
Figure 7.9 Interconnections and Address Map for 2WE
H8/3048B Group
H'600000
H'67FFFF
H'680000
H'7FFFFF
D
15
HWR
to D
LWR
CS
WE
WE
WE 4-Mbit DRAM (16-Mbyte Mode)
A
A
RD
A
A
A
A
A
A
A
A
18
17
8
7
6
5
4
3
2
1
3
0
DRAM area
Not used
a. Interconnections (example)
b. Address map
Area 3 (16-Mbyte mode)
WE 4-Mbit DRAM (Example)
WE
WE
2WE 4-Mbit DRAM with 10-bit
row address, 8-bit column address,
and
A
A
A
A
A
A
A
A
A
A
RAS
CAS
UW
LW
OE
I/O
9
8
7
6
5
4
3
2
1
0
15
16-bit organization
to I/O
0
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