DF3048BVX25V Renesas Electronics America, DF3048BVX25V Datasheet - Page 216

MCU 3/5V 128K PB-FREE 100-TQFP

DF3048BVX25V

Manufacturer Part Number
DF3048BVX25V
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048BVX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048BVX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 7 Refresh Controller
Operation in Power-Down State
The refresh controller operates in sleep mode. It does not operate in hardware standby mode. In
software standby mode RTCNT is initialized, but RFSHCR, RTMCSR bits 5 to 3, and RTCOR
retain their settings prior to the transition to software standby mode.
Example
Pseudo-static RAM may have separate OE and RFSH pins, or these may be combined into a single
OE/RFSH pin. Figure 7.17 shows an example of a circuit for generating an OE/RFSH signal.
Check the device characteristics carefully, and design a circuit that fits them. Figure 7.18 shows a
setup procedure to be followed by a program.
Rev. 3.00 Sep 27, 2006 page 188 of 872
REJ09B0325-0300
Figure 7.17 Interconnection to Pseudo-Static RAM with OE
H8/3048B Group
RFSH
RD
OE/RFSH
OE
OE
OE/RFSH
RFSH Signal (Example)
RFSH
RFSH
PSRAM

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