MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 52

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

NOTES (continued)
32. V
33. The clock is allowed up to ±150ps of jitter. Each
34.
35. READs and WRITEs with auto precharge are not
36. Any positive glitch must be less than
37. Normal Output Drive Curves:
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
160
140
120
100
80
60
40
20
active while any bank is active.
timing parameter is allowed to vary by the same
amount.
t
minimum actually applied to the device CK and
CK/ inputs, collectively during bank active.
allowed to be issued until
satisfied prior to the internal precharge com-
mand being issued.
clock and not more than +400mV or 2.9 volts,
whichever is less. Any negative glitch must be less
than
-300mV or 2.2 volts, whichever is more positive.
a) The full variation in driver pull-down current
b) The variation in driver pull-down current
c) The full variation in driver pull-up current
d)The variation in driver pull-up current within
0
HP min is the lesser of
0.0
DD
from minimum to maximum process, tem-
perature and voltage will lie within the outer
bounding lines of the V-I curve of Figure A.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure A.
from minimum to maximum process,
temperature and voltage will lie within the
outer bounding lines of the V-I curve of
Figure B.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within
the inner bounding lines of the V-I curve of
Figure B.
must not vary more than 4% if CKE is not
1
/
3
of the clock cycle and not exceed either
0.5
Pull-Down Characteristics
1.0
Figure A
V
OUT
t
CL minimum and
(V)
t
RAS
1.5
(MIN)
can be
1
2.0
/
3
of the
t
CH
2.5
52
38. Reduced Output Drive Curves:
-100
-120
-140
-160
-180
-200
e) The full variation in the ratio of the maximum
f) The full variation in the ratio of the nominal
a) The full variation in driver pull-down current
b) The variation in driver pull-down current
c) The full variation in driver pull-up current
d)The variation in driver pull-up current within
e) The full variation in the ratio of the maximum
f) The full variation in the ratio of the nominal
-20
-40
-60
-80
0
0.0
to minimum pull-up and pull-down current
should be between .71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0 Volt,
and at the same voltage and temperature.
pull-up to pull-down current should be unity
±10%, for device drain-to-source voltages
from 0.1V to 1.0 Volt.
from minimum to maximum process, tem-
perature and voltage will lie within the outer
bounding lines of the V-I curve of Figure C.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure C.
from minimum to maximum process, tempera-
ture and voltage will lie within the outer
bounding lines of the V-I curve of Figure D.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within
the inner bounding lines of the V-I curve of
Figure D.
to minimum pull-up and pull-down current
should be between .71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0 V,
and at the same voltage.
pull-up to pull-down current should be unity
±10%, for device drain-to-source voltages
from 0.1V to 1.0 V.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.5
Pull-Up Characteristics
128Mb: x4, x8, x16
Figure B
1.0
V
DD
Q - V
OUT
DDR SDRAM
(V)
1.5
PRELIMINARY
©2001, Micron Technology, Inc.
2.0
2.5