MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 19

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
COMMAND
COMMAND
COMMAND
NOTE: 1. DO n (or b) = data-out from column n (or column b).
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t
AC,
CL = 2
NOP
NOP
T1
T1
CL = 2.5
t
DQSCK, and
Consecutive READ Bursts
READ
READ
Bank,
Bank,
t
Figure 8
Col b
Col b
T2
T2
DQSQ.
19
DO
n
T2n
T2n
DO
n
T3
NOP
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
T3n
T3n
128Mb: x4, x8, x16
T4
T4
NOP
NOP
DO
b
TRANSITIONING DATA
T4n
T4n
DDR SDRAM
DO
b
PRELIMINARY
T5
T5
NOP
NOP
©2001, Micron Technology, Inc.
T5n
T5n