MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 30

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
COMMAND
ADDRESS
DQS
CK#
DM
DQ
CK
NOTE: 1. DI b, etc. = data-in for column b, etc.
WRITE
Bank,
Col b
T0
2. b', etc. = the next data-in following DI b, etc., according to the programmed burst order.
3. Programmed burst length = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
t
DQSS (NOM)
WRITE
Bank,
Col x
T1
DI
b
Random WRITE Cycles
T1n
DI
b'
WRITE
Bank,
Figure 18
Col n
T2
DI
x
30
T2n
DI
x'
WRITE
Bank,
Col a
T3
DI
n
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
DI
n'
128Mb: x4, x8, x16
WRITE
Bank,
Col g
T4
DI
a
TRANSITIONING DATA
T4n
DI
a'
DDR SDRAM
PRELIMINARY
T5
NOP
DI
©2001, Micron Technology, Inc.
g
T5n
DI
g'