MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 43

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MT46V16M8TG-8L

Manufacturer Part Number
MT46V16M8TG-8L
Description
DOUBLE DATA RATE DDR SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
ABSOLUTE MAXIMUM RATINGS*
V
V
V
I/O Pins Voltage
Operating Temperature, T
Storage Temperature (plastic) ........... -55°C to +150°C
Power Dissipation ................................................... 1W
Short Circuit Output Current ............................ 50mA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1–5, 16; notes appear on pages 50–53) (0°C ≤ T
AC INPUT OPERATING CONDITIONS
(Notes: 1–5, 14, 16; notes appear on pages 50–53) (0°C ≤ T
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input, 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V ≤ V
OUTPUT LEVELS: Full drive option - x4 , x8, x16
High Current (V
Low Current (V
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
DD
DD
REF
Relative to V
Voltage Relative to V
Relative to V
Relative to V
Q Supply
and Inputs Voltage
Supply Voltage
SS
SS
SS
OUT
OUT
OUT
OUT
....................................... -1V to +3.6V
......................... -0.5V to V
...................................... -1V to +3.6V
IN
= V
= 0.373V, maximum V
= V
= 0.763V, maximum V
≤ V
DD
DD
DD
SS
Q-0.373V, minimum V
Q-0.763V, minimum V
, V
OUT
........................ -1V to +3.6V
A
REF
(ambient) .. 0°C to +70°C
≤ V
pin 0V ≤ V
DD
Q)
IN
REF
REF
DD
≤ 1.35V
,maximum V
,maximum V
Q +0.5V
REF
REF
, minimum V
, minimum V
SYMBOL
V
V
V
REF
IH
IL
A
(
43
(
AC
(
AC
AC
TT
TT
≤ +70°C; V
)
)
)
)
)
A
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
≤ + 70°C; V
TT
TT
)
)
V
0.49 x V
REF
SYMBOL
V
V
V
MIN
V
V
IH
I
IL
I
V
I
DD
I
I
OHR
DD
OLR
+ 0.310
OH
OZ
OL
REF
(
I
DD
(
TT
I
DC
DC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
= +2.5V ±0.2V, V
)
)
DD
DD
Q
0.49 x V
V
V
= +2.5V ±0.2V, V
REF
REF
-16.8
16.8
MIN
-0.3
2.3
2.3
-2
-5
-9
+ 0.15
9
- 0.04
0.51 x V
V
128Mb: x4, x8, x16
DD
REF
MAX
Q 0.51 x V
- 0.310
DD
V
V
DD
V
REF
REF
Q = +2.5V ±0.2V)
DD
Q
MAX
2.7
2.7
DD
DDR SDRAM
+ 0.04
2
5
- 0.15
+ 0.3
Q = +2.5V ±0.2V)
DD
PRELIMINARY
UNITS NOTES
Q
V
V
V
©2001, Micron Technology, Inc.
UNITS NOTES
mA 37, 39
mA
mA 38, 39
mA
µA
µA
V
V
V
V
V
V
14, 28, 40
14, 28, 40
36, 41,
36, 41
6
6, 44
7, 44
44
28
28

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