ATTINY2313A-PU Atmel, ATTINY2313A-PU Datasheet - Page 184

• Manufacturer Part Number: ATTINY2313A-PU
• Description: IC MCU AVR 2K FLASH 20MHZ 20DIP
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313A-PU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Processor Series: ATTINY2x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, USART
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 18
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• Controller Family/series: ATtiny
• No. Of I/o's: 18
• Eeprom Memory Size: 128Byte
• Ram Memory Size: 128Byte
• Cpu Speed: 20MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

20.6.2
20.6.3
20.6.4
184
ATtiny2313A/4313
Considerations for Efficient Programming
Chip Erase
Programming the Flash
If the rise time of the V
tive algorithm can be used.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
are not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
been applied to ensure the Prog_enable Signature has been latched.
and V
been applied to ensure the Prog_enable Signature has been latched.
commands.
The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
to 0V.
CC
CC
, and as soon as V
actually reaches 4.5 -5.5V before giving any parallel programming
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
and GND.
Table 20-10 on page 183
CC
“Page Size” on page
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
(Note:)
memories plus Lock bits. The Lock bits
181. When programming the Flash,
to “0000”, RESET pin to 0V
8246A–AVR–11/09