ATTINY2313A-PU Atmel, ATTINY2313A-PU Datasheet - Page 18

• Manufacturer Part Number: ATTINY2313A-PU
• Description: IC MCU AVR 2K FLASH 20MHZ 20DIP
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313A-PU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Processor Series: ATTINY2x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, USART
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 18
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• Controller Family/series: ATtiny
• No. Of I/o's: 18
• Eeprom Memory Size: 128Byte
• Ram Memory Size: 128Byte
• Cpu Speed: 20MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

5.3.3
5.3.4
5.3.5
18
ATtiny2313A/4313
Split Byte Programming
Erase
Write
EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the
erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
To erase a byte, the address must be written to EEARL. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
To write a location, the user must write the address into EEARL and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in
page
30.
Table 5-1 on page
Table 5-1 on page
22). The EEPE bit remains set until the erase operation
“OSCCAL – Oscillator Calibration Register” on
22. The EEPE bit remains set until the erase
Table 5-1 on page
22). The EEPE bit
8246A–AVR–11/09