ATTINY2313A-PU Atmel, ATTINY2313A-PU Datasheet - Page 17

• Manufacturer Part Number: ATTINY2313A-PU
• Description: IC MCU AVR 2K FLASH 20MHZ 20DIP
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313A-PU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Processor Series: ATTINY2x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: SPI, USART
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 18
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• Controller Family/series: ATtiny
• No. Of I/o's: 18
• Eeprom Memory Size: 128Byte
• Ram Memory Size: 128Byte
• Cpu Speed: 20MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

5.3
5.3.1
5.3.2
8246A–AVR–11/09
EEPROM Data Memory
EEPROM Read/Write Access
Atomic Byte Programming
Figure 5-3.
The ATtiny2313A/4313 contains 128/256 bytes of data EEPROM memory. It is organized as a
separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register. For a detailed description of Serial data
downloading to the EEPROM, see
The EEPROM Access Registers are accessible in the I/O space.
The write access times for the EEPROM are given in
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEARL Register and data into EEDR Register. If the
“Atomic Byte Programming” on page 17
Address
clk
On-chip Data SRAM Access Cycles
Data
Data
WR
CPU
RD
“Preventing EEPROM Corruption” on page 20
CC
Compute Address
is likely to rise or fall slowly on Power-up/down. This causes the
T1
Memory Access Instruction
page
190.
Address valid
and
T2
Table 5-1 on page
“Split Byte Programming” on page 18
Next Instruction
for details on how to avoid
T3
22. A self-timing func-
for
17