HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 57

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
3.4
Figure 41
/condition. Temperature (Tcase): Minimum = 0 °C / -25°C, Maximum = 70°C.
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
-25.0
-50.0
-75.0
75.0
50.0
25.0
0.0
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and
0.0
shows the characteristics of full and half drive strength. It is specified under best and worst process variation
Full Drive Strength IV Curves
I
DD6
0.5
max. current is measured at 85°C. Typ. values are obtained from device characterization.
Pull-up and Pull-down Characteristics
1.0
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Temperature
Max.
1.5
Symbol
I
DD6
PD Min
PD Max
PU Min
PU Max
1520
1020
640
560
1080
740
480
420
840
580
420
340
57
HYE18M1G320BF
Typ.
-10.0
-20.0
-30.0
30.0
20.0
10.0
0.0
0.0
1800
—
—
—
1560
—
—
—
1340
—
—
—
Full Drive Strength and Half Drive Strength
Max.
Half Drive Strength IV Curves
Values
0.5
—
1020
640
560
—
740
480
420
—
580
420
340
HYB18M1G320BF
Typ.
1.0
—
1800
—
—
1560
—
—
—
1340
—
—
1-Gbit DDR Mobile-RAM
Self Refresh Currents
HY[B/E]18M1G320BF
Max.
FIGURE 41
1.5
TABLE 27
µA
Units
Data Sheet
PD Min
PD Max
PU Min
PU Max
1)
Note