HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 54

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

20) A low level on DQS may be maintained during High-Z states (DQS drivers disabled) by adding a weak pull-down element in the system.
21) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
22)
23) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the maximum absolute
1) Output slew rate is measured between
2) The parameter is measured using a 20pF capacitive load connected to
3) The ratio of the pull-up slew rate to the pull-down slew rate is specified for the same temperature and voltage, over the entire temperature
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Parameter
Pull-up and Pull-down Slew Rate
(Full Drive Buffer)
Pull-up and Pull-down Slew Rate
(Half Drive Buffer)
Output Slew Rate Matching Ratio
(Pull-up to Pull-down)
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above
Maximum undershoot area below
It is recommended to turn off the weak pull-down element during read and write bursts (DQS drivers enabled).
no. of clock cycles = specified delay / clock period; round to the next higher integer.
t
interval between any Refresh command and the next Refresh command is 8 *
and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process
variation.
DAL
= (
t
WR
/
t
CK
) + (
t
RP
/
t
CK
): for each of the terms above, if not already an integer, round to the next higher integer.
V
V
DD
SS
V
ILD(DC)
and
V
IHD(AC)
TBD
TBD
-
Typical Range
(rising) or
54
V
IHD(DC)
V
SSQ
.
0.7
0.3
0.7
and
t
REFI
AC Overshoot / Undershoot Specification
Minimum
V
.
ILD(AC)
Measurement with Reference Load
(falling).
Output Slew Rate Characteristics
2.5
1.0
1.4
0.9
0.9
3.0
3.0
Maximum
Maximum
1-Gbit DDR Mobile-RAM
HY[B/E]18M1G320BF
FIGURE 39
TABLE 24
TABLE 25
Unit
V/ns
V/ns
-
Unit
V
V
V-ns
V-ns
Data Sheet
Note
1)2)
1)2)
1)3)
Note
–
–
–
–