HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 3

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1
1.1
• Low power DDR 1Gbit x32 dual die implementation
• Each die is organized as 4 banks x 8 Mbit x16
• Double-data-rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver
• DQS is edge-aligned with data for READs and center-aligned with data for WRITEs
• Differential clock input (CK / CK)
• Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS
• Four internal banks for concurrent operation
• Programmable CAS latency: 2 and 3
• Programmable burst length: 2, 4, 8 and 16
• Programmable drive strength (full, half, quarter)
• Auto refresh and self refresh modes
• 8192 refresh cycles / 64ms
• Auto precharge
• Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature ranges
• 90-ball PG-VFBGA-90-5 package (11 × 12.5 × 1.0 mm)
• RoHS Compliant Product
Power Saving Features
• Low supply voltages:
• Optimized operating (
• DDR I/O scheme with no DLL
• Programmable Partial Array Self Refresh (PASR)
• Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
• Clock Stop, Power-Down and Deep Power-Down modes
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Part Number Speed Code
Clock Frequency (
Access Time (
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
t
ACmax
f
CKmax
)
Overview
Features
V
I
)
DD0
DD
1)
,
and
I
DD4
V
), self refresh (
DDQ
= 1.80 V nominal
I
DD6
) and standby currents (
CL = 3
CL = 2
3
I
DD2
,
I
DD3
133
66
6.5
)
- 7.5
1-Gbit DDR Mobile-RAM
MHz
MHz
ns
HY[B/E]18M1G320BF
Performance
Unit
TABLE 1
Data Sheet