HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 22

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Rev.1.00, 2007-03
02022006-J7N7-GYFP
Parameter
DQ output access time from CK/CK
DQS output access time from CK/CK
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
DQ / DQS output hold time from DQS
Data hold skew factor
Read preamble
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
DO n = Data Out from column n
Burst Length = 4 in the case shown
CAS Latency = 3 in the case shown
All DQ are valid tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC
DQS
DQS
DQ
DQ
CK
CK
tACmax
tACmin
t
CK
t
CK
CL = 3
CL = 2
t
RPRE
t
RPRE
t
DQSCK
t
t
LZ
AC
t
t
DQSCK
t
CH
22
LZ
t
AC
t
DQSQmax
DO n
t
QH
t
t
t
t
t
t
t
t
t
t
t
t
AC
DQSCK
LZ
HZ
DQSQ
QH
QHS
RPRE
RPST
RAS
RC
CL
t
Symbol
DQSQmax
DO n
t
QH
DO n+1 DO n+2 DO n+3
Basic READ Timing Parameters for DQs
Timing Parameters for READ Command
DO n+1 DO n+2 DO n+3
2.0
2.0
1.0
–
–
t
–
0.9
0.7
0.4
45
65
HP
-t
min.
QHS
t
DQSCK
t
DQSCK
- 7.5
6.5
6.5
–
6.5
0.6
0.75
1.1
1.1
0.6
–
–
70,000
t
RPST
t
QH
1-Gbit DDR Mobile-RAM
max.
t
HZ
HY[B/E]18M1G320BF
t
RPST
t
t
HZ
QH
= Don't Care
FIGURE 12
TABLE 11
Unit
ns
ns
ns
ns
ns
ns
ns
t
t
ns
ns
CK
CK
Data Sheet
Note
1)2)
1)2)
3)
3)
4)
5)
5)
–
–
6)
6)