HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 34

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Full-speed random WRITE accesses within a page or pages can be performed as shown in
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Command
Command
Address
DI b (n) = Data In to column b (or column n).
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank and may be to the same or different devices.
Address
DI b etc. = Data In to column b, etc. .
b', etc. = the next Data In following DI b, etc. according to the programmed burst order
Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated.
Each WRITE command may be to any active bank and may be to the same or different devices.
DQS
DQS
DM
DQ
DM
CK
CK
DQ
CK
CK
BA,Col b
BA,Col b
WRITE
WRITE
t
t
DQSSmax
DQSSmax
BA,Col x
WRITE
NOP
Di b
Di b
Di b'
BA,Col n
WRITE
NOP
34
Di x
Non-Consecutive WRITE to WRITE (max. t
Di x'
BA,Col n
BA,Col a
WRITE
WRITE
Di n
Random WRITE Cycles (max. t
Di n'
BA,Col g
WRITE
NOP
Figure
Di n
Di a
1-Gbit DDR Mobile-RAM
26.
HY[B/E]18M1G320BF
Di a'
FIGURE 25
FIGURE 26
= Don't Care
= Don't Care
NOP
NOP
Data Sheet
DQSS
DQSS
)
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