HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 35

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

2.4.7.1
Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE
burst,
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in
in pairs that are registered prior to the
with DM, as shown in
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Com m and
Command
Address
D I b = D ata In to colum n b. D O n = D ata O ut from colum n n.
An interrupted burst of 4 is show n, 2 data elem ents are w ritten.
3 subsequent elem ents of D ata In are applied in the program m ed order follow ing D I b.
t
A10 is LO W w ith the W RITE com m and (Auto Precharge is disabled)
The R EAD and W R ITE com m ands are to the sam e device but not necessarily to the sam e bank.
W TR
Address
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
t
A10 is LOW with the W RITE command (Auto Precharge is disabled)
The READ and W RITE commands are to the same device but not necessarily to the same bank.
W TR
t
WTR
D Q S
DQS
D Q
D M
is referenced from the positive clock edge after the last D ata In pair.
C K
C K
DQ
DM
is referenced from the positive clock edge after the last Data In pair.
CK
CK
(WRITE to READ) should be met as shown in
BA,Col b
WRITE
BA,Col b
WRITE
WRITE to READ
Figure
t
DQSSm ax
t
DQSSm ax
28.
N O P
NOP
t
WTR
Di b
Di b
period are written to the internal array, and any subsequent data-in must be masked
N O P
NOP
Figure
t
W TR
35
BA,Col n
27.
R EAD
NOP
Non-Interrupting WRITE to READ (max. t
t
W TR
Interrupting WRITE to READ (max. t
BA,Col n
READ
N O P
CL=3
C L=3
Figure
NOP
NO P
1-Gbit DDR Mobile-RAM
28. Note that only the data-
HY[B/E]18M1G320BF
FIGURE 27
FIGURE 28
= Don't C are
= Don't Care
DO n
NOP
Data Sheet
NO P
DQSS
DQSS
)
)