HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 51

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) See
2)
3) V
4) The value of V
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input leakage current
Output leakage current
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ, DM, DQS)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ, DQS)
Output high voltage (
Output low voltage (
V
DDmax
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
Table 25
=
V
DDQmax
and
IX
is expected to be equal to 0.5 x
= 1.95V permitted for Clock Frequency (
Figure 40
I
I
OL
OH
= 0.1 mA)
= -0.1 mA)
for overshoot and undershoot definition.
V
DDQ
and must track variations in the DC level.
f
CKmax
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
) 133MHz (CL = 3) and commercial temperature range -0 ° C ≤
IL
OL
Symbol
DD
DDQ
IH
IL
IN
ID(DC)
ID(AC)
IX
IHD(DC)
ILD(DC)
IHD(AC)
ILD(AC)
OH
OL
51
1.70
1.70
-1.0
-1.5
0.8 ×
-0.3
-0.3
0.4 ×
0.6 ×
0.4 ×
0.7 ×
-0.3
0.8 ×
-0.3
0.9 ×
–
V
V
V
V
V
V
V
min.
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Values
1.90
1.90
1.0
1.5
V
0.2 ×
V
V
V
0.6 ×
V
0.3 x V
V
0.2 ×
–
0.1 ×
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Electrical Characteristics
+ 0.3
+ 0.3
+ 0.6
+ 0.6
+ 0.3
+ 0.3
V
V
V
V
max.
DDQ
DDQ
DDQ
DDQ
DDQ
1-Gbit DDR Mobile-RAM
HY[B/E]18M1G320BF
TABLE 22
V
V
µΑ
µA
V
V
V
V
V
V
V
V
V
V
V
V
Unit
Data Sheet
T
Note
1)2)
1)2)
1)
1)
1)
1)
1)
1)3)
1)3)
1)4)
1)
1)
1)
1)
1)
1)
J
≤ 70 ° C.