HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 55

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3.3
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Parameter & Test Conditions
Operating one bank active-precharge current:
t
address inputs are SWITCHING; data bus inputs are STABLE
Precharge power-down standby current:
all banks idle, CKE is LOW; CS is HIGH,
are SWITCHING; data bus inputs are STABLE
Precharge power-down standby current with clock stop:
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and
control inputs are SWITCHING; data bus inputs are STABLE
Precharge non power-down standby current:
all banks idle, CKE is HIGH; CS is HIGH,
are SWITCHING; data bus inputs are STABLE
Precharge non power-down standby current with clock stop:
all banks idle, CKE is HIGH, CS is HIGH, CK = LOW, CK = HIGH; address and
control inputs are SWITCHING; data bus inputs are STABLE
Active power-down standby current:
one bank active, CKE is LOW; CS is HIGH,
are SWITCHING; data bus inputs are STABLE
RC
=
t
RCmin
;
t
CK
=
t
CKmin
Operating Currents
; CKE is HIGH; CS is HIGH between valid commands;
-0.5
-1.0
-1.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
t
t
1
CK
CK
t
Max. Amplitude = 0.9V
CK
=
=
=
t
t
CKmin
CKmin
t
CKmin
2
; address and control inputs
; address and control inputs
; address and control inputs
3
55
time (ns)
4
Max. Area = 3V-ns
Undershoot
Overshoot
AC Overshoot and Undershoot Definition
5
I
I
I
I
I
I
Symbol
DD0
DD2P
DD2PS
DD2N
DD2NS
DD3P
6
Maximum Operating Currents
100
1.40
1.20
30
3.0
4
7
VDD
VSS
Values
- 7.5
1-Gbit DDR Mobile-RAM
HY[B/E]18M1G320BF
FIGURE 40
mA
mA
mA
mA
mA
mA
TABLE 26
Unit Note
Data Sheet
4)
1)2)3)