HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 32

• Manufacturer Part Number: HYB18M1G320BF
• Description: DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case, a
continuous flow of input data can be maintained. The new WRITE command can be issued on any clock cycle following the
previous WRITE command. The first data element from the new burst is applied after either the last element of a completed
burst or the last desired data element of a longer burst which is being truncated. The new WRITE command should be issued
x clock cycles after the first WRITE command, where x equals the number of desired data element pairs (pairs are required by
the 2n pre fetch architecture).
Figure 24
Rev.1.00, 2007-03
02022006-J7N7-GYFP
Command
Address
DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
DQS
DQS
shows concatenated WRITE bursts of 4.
DM
DM
DQ
DQ
CK
CK
BA,Col b
WRITE
t
DQSSmin
t
DQSSmax
Di b
NOP
Di b
NOP
32
NOP
WRITE Burst (min. and max. t
NOP
1-Gbit DDR Mobile-RAM
HY[B/E]18M1G320BF
FIGURE 23
= Don't Care
NOP
Data Sheet
DQSS
)