NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 54

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

12 DC and AC parameters
12.1
54/60
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
Figure 33. Ready/Busy AC waveform
Figure 34. Ready/Busy load circuit
34,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 33
and
Figure 35
ready V DD
DEVICE
V SS
V DD
R P min
R P min
show the electrical characteristics for the Ready/Busy
=
t f
-------------------------------------------------------------
V DDmax V OLmax
V OL
=
P
-------------------------- -
8mA
I OL
can be calculated using the following equation:
busy
r
R P
3,2V
.
–
Open Drain Output
+
RB
+
I L
I L
NAND08GW3C2B, NAND16GW3C4B
t r
ibusy
V OH
AI07564B
AI07563B
P