NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 16

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

3 Signal descriptions
3.7
3.8
3.9
3.10
16/60
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted
Program or Erase operations. When Write Protect is Low, V
any Program or Erase operations.
It is recommended to keep the Write Protect pin Low, V
Ready/Busy (RB
The Ready/Busy output, RB, is an open-drain output that can identify if the P/E/R controller
is currently active.
When Ready/Busy is Low, V
operation completes, Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low indicates that one, or more, of the memories is
busy.
During power-up and power-down a minimum recovery time of 10 µs is required before the
command interface is ready to accept a command. During this period the Ready/Busy signal
is Low, V
RB
Refer to
calculate the value of the pull-up resistor.
V
V
power supply for operations (read, program and erase).
V
Ground, V
ground.
DD
DD
SS
2
is only available on the NAND16GW3C4B.
provides the power supply to the internal core of the memory device. It is the main
ground
supply voltage
Section 12.1: Ready/Busy signal electrical characteristics
OL
SS,
.
is the reference for the power supply. It must be connected to the system
1
, RB
OL
, a read, program or erase operation is in progress. When the
2
)
OH
.
NAND08GW3C2B, NAND16GW3C4B
IL
, during power-up and power-down.
IL
, the device does not accept
for details on how to