NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 48

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

12 DC and AC parameters
Figure 24. Sequential data output after Read AC waveforms (EDO mode)
1. In EDO mode, CL and AL are Low, V
2. t
Figure 25. Read Status Register AC waveform
48/60
RLQX
I/O
CL
W
E
R
is applicable for frequencies higher than 33 MHz (i.e. t
RB
I/O
R
E
tELQV
tBHRL
(R Accesstime)
tCLHWH
(Data Setup time)
tRLQV
tRLRH
tELWH
tDVWH
IL
, and W is High, V
tRLRL
70h or 7Bh
tWLWH
Data Out
IH
(Data Hold time)
tRHRL
tWHDX
.
tWHCLL
tWHEH
RLRL
tDZRL
tWHRL
lower than 30 ns).
tCLLRL
tRLQX
tRLQV
tRLQV
tELQV
NAND08GW3C2B, NAND16GW3C4B
Data Out
Status Register
tRHQX
tEHQZ
tEHQX
tRHQZ
Output
tEHQZ
tEHQX
Data Out
ai13177
tRHQX (2)
tRHQZ
ai13175