NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 37

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2B, NAND16GW3C4B
8
9
Data protection
The device has hardware features to protect against spurious program and erase
operations. An internal voltage detector disables all functions whenever V
V
In the V
Low (V
Figure 17. Data protection
Software algorithms
This section provides information on the software algorithms that Numonyx recommends
implementing to manage the bad blocks and extend the lifetime of the NAND device.
NAND Flash memories are programmed and erased by Fowler-Nordheim tunneling using
high voltage. Exposing the device to high voltage for extended periods can cause the oxide
layer to be damaged. For this reason, the number of program and erase cycles is limited
(see
and error correction code algorithms to extend the number of program and erase cycles and
to increase data retention.
To help integrate a NAND memory into an application Numonyx can provide a File System
OS native reference software, which supports the basic commands of file management.
Contact the nearest Numonyx sales office for more details.
LKO
Table 17
threshold. It is recommended to keep WP at V
IL
DD
) to guarantee hardware protection during power transitions, as shown in
V DD
WP
range from V
for value). It is recommended to implement garbage collection, wear-leveling
Nominal Range
LKO
V LKO
Locked
to the lower limit of nominal range, the WP pin should be kept
Locked
IL
during power-up and power-down.
8 Data protection
Ai11086b
CC
is below the
Figure
37/60
17.