NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 13

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2B, NAND16GW3C4B
2
2.1
Memory array organization
The memory array is comprised of NAND structures where 32 cells are connected in series.
The memory array is organized into blocks where each block contains 128 pages. The array
is split into two areas, the main area and the spare area. The main area of the array stores
data, whereas the spare area typically stores software flags or bad block identification.
The pages are split into a 2048-byte main area and a spare area of 64 bytes. Refer to
Figure 6: Memory array
Bad blocks
The NAND08GW3C2B and NAND16GW3C4B devices may contain bad blocks, where the
reliability of blocks that contain one or more invalid bits is not guaranteed. Additional bad
blocks may develop during the lifetime of the device.
The bad block Information is written prior to shipping (refer to
management
Table 3: Valid blocks
shown include both the bad blocks that are present when the device is shipped and the bad
blocks that could develop later on.
These blocks need to be managed using bad blocks management and block replacement
(refer to
Table 3.
1. The NAND16GW3C4B is composed of two 8-Gbit dice. The minimum number of valid blocks is 4096 for
each die.
Section 9: Software
Density of device
Valid blocks
for more details).
16 Gbits
8 Gbits
shows the minimum number of valid blocks in each device. The values
organization.
(1)
algorithms).
Minimum
4016
8032
2 Memory array organization
Section 9.1: Bad block
Maximum
4096
8192
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