NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 40

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

9 Software algorithms
9.4
9.5
9.5.1
9.5.2
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Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a wear-leveling algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a wear-leveling algorithm, not all blocks get used at the same
rate. The wear-leveling algorithm ensures that equal use is made of all the available write
cycles for each block.
There are two wear-leveling levels:
1.
2.
The second level wear-leveling is triggered when the difference between the maximum and
the minimum number of write cycles per block reaches a specific threshold.
Hardware simulation models
Behavioral simulation models
Denali Software Corporation models are platform-independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND Flash devices, and, therefore,
allow software to be developed before hardware.
IBIS simulations models
I/O buffer information specification (IBIS) models describe the behavior of the I/O buffers
and electrical characteristics of Flash devices.
These models provide information such as AC characteristics, rise/fall times, and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
First level wear-leveling, where new data is programmed to the free blocks that have
had the fewest write cycles
Second level wear-leveling, where long-lived data is copied to another block so that the
original block can be used for more frequently changed data.
NAND08GW3C2B, NAND16GW3C4B