NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 42

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

11 Maximum ratings
11
42/60
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only, and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE program
and other relevant quality documents.
Table 18.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
Table 18: Absolute maximum ratings
NAND08GW3C2B, NAND16GW3C4B
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
4.6
4.6
Unit
may
°C
°C
V
V