NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 21

• Manufacturer Part Number: NAND08GW3C2B
• Description: 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2B, NAND16GW3C4B
6
6.1
6.2
6.3
Device operations
This section gives the details of the device operations.
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see
subsequent consecutive read commands only require the confirm command code (30h).
Once a read command is issued, two types of operations are available: random read and
page read.
Random read
Each time the Read command is issued, the first read is random-read.
Page read
After the first random read access, the page data (2112 bytes) is transferred to the page
buffer in a time of t
Ready/Busy signal goes High. The data can then be read out sequentially (from the
selected column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command. The Random Data Output command can be used
to skip some data during a sequential data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.The Random
Data Output command can be issued as many times as required within a page.
WHBH
(refer to
Table 23
Table 7:
for value). Once the transfer is complete, the
Commands. Once a read command is issued,
6 Device operations
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