NAND08GW3C2B NUMONYX [Numonyx B.V], NAND08GW3C2B Datasheet - Page 45

no-image

NAND08GW3C2B

Manufacturer Part Number
NAND08GW3C2B
Description
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND08GW3C2BN6E
Manufacturer:
ST
0
NAND08GW3C2B, NAND16GW3C4B
Table 23.
1. ES = Electronic Signature.
2. t
3. WP High to W High during Program/Erase Enable operations.
t
t
Symbol
t
WHWH
t
t
VHWH
VLWH
t
t
t
t
t
t
ALLRL1
ALLRL2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
BLBH5
CLLRL
WHBH
RHQX
WHBL
WHRL
EHQZ
RHRL
EHQX
RLQX
RHQZ
RLRH
RLQV
BHRL
DZRL
ELQV
RLRL
data cycle.
WHWH
(3)
(3)
(2)
is the delay from Write Enable rising edge during the final address cycle to Write Enable rising edge during the first
Symbol
t
t
t
t
t
t
PROG
t
RHOH
t
RLOH
BERS
t
CBSY
t
t
t
t
t
t
Alt.
WHR
COH
t
t
t
t
CHZ
CEA
REH
RHZ
t
t
REA
RST
CLR
ADL
t
WB
AC characteristics for operations
RR
RC
WW
AR
RP
t
IR
R
Read Enable High to Output Hold
Read Enable Low to Output Hold (EDO Mode)
Last Address latched on Data Loading Time during Program operations
Read Enable High to Read Enable Low
Read Enable Low to Read Enable High
Read Enable Low to Read Enable Low
Write Enable High to Ready/Busy High
Chip Enable High to Output Hold
Ready/Busy Low to Ready/Busy High
Address Latch Low to Read Enable
Read Enable Low to Output Valid
Dummy Busy Time for Multiplane operations
Command Latch Low to Read Enable Low
Write Enable High to Read Enable Low
Ready/Busy High to Read Enable Low
Write Enable High to Ready/Busy Low
Low
Read Enable High to Output Hi-Z
Reset Busy time, during program
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Data Hi-Z to Read Enable Low
Reset Busy time, during ready
Reset Busy time, during erase
Reset Busy time, during read
Write Protection time
Parameter
Read Enable High Hold time
Read electronic signature
Read Enable Pulse Width
Read Enable Access time
Read ES Access time
Program Busy time
Erase Busy time
Read Cycle time
Read Busy time
Read Busy time
Read cycle
12 DC and AC parameters
(1)
Min Typ Max
100
100
10
10
20
10
10
15
15
12
25
80
70
0
5
Value
1
2000
500
100
100
60
20
20
50
25
20
60
3
5
2
45/60
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns

Related parts for NAND08GW3C2B