M29DW128G60NF6F NUMONYX [Numonyx B.V], M29DW128G60NF6F Datasheet

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M29DW128G60NF6F

Manufacturer Part Number
M29DW128G60NF6F
Description
128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
December 2007
For further information contact your local STMicroelectronics sales office.
Features
Supply voltage
– V
– V
Asynchronous Random/Page Read
– Page width: 8 words
– Page access: 25 ns
– Random access: 60 ns
Programming time
– 15 µs per byte/word (typical)
– 32-word write buffer
Erase verify
Memory blocks
– Quadruple bank memory array:
– Parameter blocks (at top and bottom)
Dual operation
– While Program or Erase in one bank, Read
Program/Erase Suspend and Resume modes
– Read from any block during Program
– Read and Program another block during
Unlock Bypass Program
– Faster production/batch programming
Common Flash interface
– 64 bit security code
100,000 Program/Erase cycles per block
Read
16 Mbit+48 Mbit+48 Mbit+16 Mbit
in any of the other banks
Suspend
Erase Suspend
CC
PP
=12 V for Fast Program (optional)
= 2.7 to 3.6 V for Program, Erase and
128 Mbit (8 Mb x 16, multiple bank, page, dual boot)
Rev 2
Low power consumption
– Standby and automatic standby
Hardware block protection
– V
Security features
– Standard protection
– Password protection
– Additional block protection
Extended memory block
– Extra block used as security block or to
Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2200h
ECOPACK
protect of the four outermost parameter
blocks
store additional information
PP
3 V supply Flash memory
/WP pin for fast program and write
®
packages available
TSOP56 (NF)
TBGA64 (ZA)
14 x 20 mm
10 x 13 mm
M29DW128G
BGA
www.numonyx.com
Data Brief
1/11
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M29DW128G60NF6F Summary of contents

Page 1

Mbit ( 16, multiple bank, page, dual boot) Features ■ Supply voltage – 2.7 to 3.6 V for Program, Erase and CC Read – V =12 V for Fast Program (optional) PP ■ Asynchronous Random/Page ...

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Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

M29DW128G List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M29DW128G 1 Description The M29DW128G is a 128 Mbit ( 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. At Power-up the ...

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Description Table 1. Signal names Signal name A0-A22 DQ0-DQ15 / Figure 1. Logic diagram 6/11 Function Address inputs Data inputs/outputs Chip Enable Output Enable Write Enable Reset/Block Temporary ...

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M29DW128G Table 2. Bank architecture Bank Bank size A 16 Mbit B 48 Mbit C 48 Mbit D 16 Mbit Figure 2. TSOP connections Parameter blocks N. of blocks Block size 64 Kbytes Kwords — — — — ...

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Description Figure 3. TBGA connections (top view through package 8/ A17 A18 NC ...

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M29DW128G 2 Part numbering The Table 3. Ordering information scheme Example: Device type M29 Architecture D = Dual operation Operating voltage 2 Device function 128G = 128 Mbit (x 16), page, dual ...

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Revision history 3 Revision history Table 4. Document revision history Date Version 17-Sep-2007 10-Dec-2007 10/11 1 Initial release. 2 Applied Numonyx branding. M29DW128G Revision details ...

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M29DW128G INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF ...

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