SAM3X8E Atmel Corporation, SAM3X8E Datasheet - Page 474

• Manufacturer Part Number: SAM3X8E
• Manufacturer: Atmel Corporation

26.16.5.2
26.17 SMC Error Correcting Code Functional Description
474
474
SAM3X/A
SAM3X/A
Program Page
Figure 26-38. Program Page Flow Chart
Writing the ECC can not be done using the NFC so it needs to be done “manually”.
Note that instead of using the interrupt one can poll the NFCBUSY Flag.
For more information on the NFC Control Register, see
Command”.
A page in NAND Flash and SmartMedia memories contains an area for main data and an addi-
tional area used for redundancy (ECC). The page is organized in 8-bit or 16-bit words. The page
size corresponds to the number of words in the main area plus the number of words in the extra
area used for redundancy.
Over time, some memory locations may fail to program or erase properly. In order to ensure that
data is stored properly over the life of the NAND Flash device, NAND Flash providers recom-
Write Data in the NFC
Enable XFRDONE
SRAM (CPU or DMA)
Write the Command
Register through the
AHB interface
wait for Ready/Busy
interrupt
Con gure Device,
writing in the User
interface
Wait for interrupt
Write ECC
Section 26.16.2.2 ”NFC Address
11057A–ATARM–17-Feb-12
11057A–ATARM–17-Feb-12