DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 758

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 Flash Memory (0.18-µm F-ZTAT Version)
• Erasure
Rev. 2.00 Jun. 28, 2007 Page 732 of 864
REJ09B0341-0200
Erasure is executed by the erasure selection and block erasure commands.
Firstly, erasure is selected by the erasure selection command and the boot program then erases
the specified block. The command should be repeatedly executed if two or more blocks are to
be erased. Sending a block erasure command from the host with the block number H'FF will
stop the erasure operating. On completion of erasing, the boot program will wait for selection
of programming or erasing.
The sequence for the erasure selection and block erasure commands is shown in figure 18.28.
Repeat
Host
Figure 18.28 Erasure Sequence
Preparation for erasure (H'48)
Erasure (Erasure block number)
Erasure (H'FF)
ACK
ACK
ACK
Transfer of erasure
Boot program
Erasure
program