DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 740

IC H8SX/1657 MCU FLASH 120TQFP

DF61657CN35FTV

Manufacturer Part Number
DF61657CN35FTV
Description
IC H8SX/1657 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61657CN35FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
35MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
82
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF61657CN35FTV
Manufacturer:
RENESAS
Quantity:
101
Part Number:
DF61657CN35FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 18 Flash Memory (0.18-µm F-ZTAT Version)
3. Programming/erasing state
These boot program states are shown in figure 18.23.
Rev. 2.00 Jun. 28, 2007 Page 714 of 864
REJ09B0341-0200
Programming and erasure by the boot program take place in this state. The boot program is
made to transfer the programming/erasing programs to the on-chip RAM by commands from
the host. Sum checks and blank checks are executed by sending these commands from the
host.
Programming/erasing
Transition to
programming/erasing
Operations for erasing
user MATs and user
wait
boot MATs
Programming
Operations for
programming
Bit-rate-adjustment
Inquiry/response
Figure 18.23 Boot Program States
state
wait
Reset
Erasing
Inquiry
inquiry and selection
Operations for
Operations for
erasing
Checking
Response
Operations for
Operations for
response
checking

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