DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 668

• Manufacturer Part Number: DF2265TE13V
• Description: IC H8S/2265 MCU FLASH 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2265TE13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
25.2.5
Table 25.10 lists the D/A conversion characteristics.
Table 25.10 D/A Conversion Characteristics
Condition A (F-ZTAT version): V
Condition C (F-ZTAT version): V
Note: * Does not apply to module stop mode, software standby mode, watch mode, subactive
Rev. 5.00 Sep. 01, 2009 Page 616 of 656
REJ09B0071-0500
Item
Resolution
Conversion time
Absolute accuracy *
mode, and subsleep mode.
D/A Conversion Characteristics
V
T
V
T
a
a
SS
SS
= –40°C to +85°C (wide-range specifications)
= –40°C to +85°C (wide-range specifications)
= AV
= AV
SS
SS
= 0 V, φ = 2 to 13.5 MHz, T
= 0 V, φ = 10 to 20.5 MHz, T
Min.
8
⎯
⎯
⎯
Condition A and C
CC
CC
Typ.
8
⎯
±2.0
⎯
= 4.0 V to 5.5 V, AV
= 3.0 V to 5.5 V, AV
Max.
8
10
±3.0
±2.0
a
= –20°C to +75°C (regular specifications),
a
= –20°C to +75°C (regular specifications),
Unit
LSB
bits
µs
LSB
CC
CC
= 4.0 V to 5.5 V, V
= 2.7 V to 5.5 V, V
Test Conditions
Load capacitance: 20 pF
Load resistance: 2 M
Load resistance: 4 M
ref
ref
= 4.0 V to AV
= 2.7 V to AV
Ω
Ω
CC
CC
,
,